Ultrafast Nonlinear Optical Response in GaN/AlN Quantum Dots for Optical Switching Applications at 1.55 μm

Ultrafast Nonlinear Optical Response in GaN/AlN Quantum Dots for Optical Switching

Characterization of the ultrafast carrier dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.55 μm

Self-assembled quantum dot (QD) Semiconductor Optical Amplifiers (SOAs) are believed to have faster carrier recovery times than conventional multiple quantum well, or bulk SOAs. It is therefore of interest to study the carrier dynamics of QD SOAs to assess their potential as ultrafast nonlinear devices for switching and signal processing. In this work we report experimental characterization of ...

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells.

We present the design, fabrication, and characterization of III-nitride quantum-well waveguides optimized for nonlinear-optical switching via intersubband transitions. A dielectric structure consisting of an AlN lower cladding and a GaN cap layer allows minimizing the propagation losses while maintaining a large modal overlap with the quantum-well active layer. A strong nonlinear saturation of ...

Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs.

We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 µm. The transmittance of the TM-polarized light increases with the incident optical power due to the saturation of the s-p(z) intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 µm and a length...

Optical properties of wurtzite and zinc-blende GaNÕAlN quantum dots

We investigate theoretically and compare optical properties of wurtzite and zinc-blende GaN/AlN quantum dots with heights from 1.5 to 4.5 nm. The quantum dot size corresponds to the strong quantum confinement regime. It has been established that the built-in piezoelectric field at the GaN/AlN interface governs optical properties of wurtzite quantum dots while having a small effect on zinc-blend...